求助 | 註冊 | 登入
論文著述
by sdmclab, 2008-05-30 16:37:25, 人氣(4640)

 

Referred Papers

*          H. J. Lin, D. Y. Lin, J. S. Wu, W. C. Chou, C. S. Yang, J. S.Wang, and W. H. Lo, “Optical Characterization of ZnMnO Thin Films on c-Al2O3, J. Kore. Phys. Soc. Vol. 53, No. 1, pp. 98-101 (2008).

*          Ping-Yuan Lin, Jyh-Rong Gong, Ping-Cheng Li, Tai-Yuan Lin, Dong-Yuan Lyu, Der-Yuh Lin, Hung-Ji Lin, Ta-Ching Li, Kuo-Jen Chang, and Wen-Jen Lin, “Optical and structural characteristics of ZnO films grown on (0001) sapphire substrates by ALD using DEZn and N2O”, J. Cry. Grow. Vol. 310, No. 12, pp. 3024-3028 (2008).

*          Shin-Li Tsai, Jenq-Shinn Wu, Hung-Ji Lin, Der-Yuh Lin, andJin-Yao Zheng, “Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications”, phys. stat. sol.(c) Vol. 5, No. 6, pp. 2167-2169 (2008).

*          Jing Yao Zheng, Jenq Shinn Wu, Der Yuh Lin, and Hung Ji Lin, “A comparative study on single and double channel AlGaN/GaN high electron mobility transistor”, phys. stat. sol. (c) Vol. 5, No. 6, pp. 1944-1946 (2008).

*          D. Y. Lin, M. C. Wu, H. J. Lin and W. L. Chen, “Photoreflectance and photoluminescence investigations of two-dimensional electron gas in pseudomorphic high electron mobility transistor structures”, Physica. E, Vol. 40,No. 5, pp. 1380-1382 (2008).

*          D. Y. Lin, M. C. Wu, H. J. Lin and J. S. Wu, “ Optical studies of two-dimensional electron gas in an InGaAs/AlGaAs pseudomorphic high electron mobility transistor structure”, Physica. E, Vol. 40, No. 5, pp. 1757-1759 (2008).

*          D. Y. Lin, J. D. Wu, J. Y. Zheng and C. F. Lin, “Optical characterization of AlxGa1-xN/GaN high electron mobility transistor structures”, Physica. E, Vol.40, No. 5, pp. 1763-1765 (2008).

*          D. Y. Lin, J. D. Wu, Y. J. Chang, and J. S. Wu, “Practical and simple circuitry for the measurement of small capacitance”, Rev. Sci. Instrum.,Vol. 78, No. 1, pp. 014703-1-014703-5 (2007).

*          D. Y. Lin, J. J. Shiu, J. D. Wu, C. S. Yang, and W. C. Chou, “Optical characterization of Zn0.97Mn0.03Se/ZnSe0.92Te0.08type II multiple-quantum-well structures”, Phys. Stat. Sol. (b), Vol. 244, No.5, pp. 1644-1649 (2007).

*          Jian-Jhin Shiu, Wei-Li Chen, Der-Yuh Lin, Chu-Shou Yang, andWu-Ching Chou, “ Photoluminescence characterization of type II Zn0.97Mn0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures”, Jan. J. Appl. Phys., Vol. 46, No. 4B, pp.2481-2485 (2007).

*          D. Y. Lin, W. C. Lin, and J. J. Shiu, “Optical study of the AlGaN/GaN high electron mobility transistor structures”, Phys. Stat. Sol. (a),Vol. 203, No. 7, pp. 1856-1860.(2006).

*          D. Y. Lin, J. J. Shiu, and C. F. Lin, “Reflectance and photoluminescence studies of InGaN/GaN multiple-quantum-well structures embedded in an asymmetric microcavity”, Phys. Stat. Sol. (b), Vol. 243, No. 7,pp. 1647-1651 (2006).

*          D. Y. Lin, W. L. Chen, W. C. Lin, J. J. Shiu, and J. Han, “Photoluminescence and edge-incident wavelength modulation transmittance spectroscopy characterizations of InGaN/GaN multiple-quantum-well structures”, Phys. Stat. Sol. (c), Vol. 3, No. 6, pp. 1983-1987 (2006).

*          Chia-Feng Lin, Jing-Hui Zheng, Zhong-Jie Yang, Jing-Jie Dai, Der-Yuh Lin, Chung-Ying Chang, Zhao-Xu Lai, and C. S. Hong, “ High-Efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure”, Appl. Phys. Lett., Vol. 88, No. 8, pp. 083121-1-083121-3 (2006). (SCI)

*          D. Y. Lin, “Optical Characterization of a GaAs/GaAlAs asymmetric microcavity structure”, Optics Express, Vol. 13, No. 26, pp. 10865-10872(2005). (SCI&EI)

*          Ching-Hwa Ho, Kuo-Wei Huang, Yu-Shyan Lin and Der-Yuh Lin, “A practical PL and PR spectroscopic system for optical characterization of semiconductor devices”, Optics Express, Vol. 13, No. 11, pp. 3951-3960 (2005).(SCI&EI)

*          D. Y. Lin, Y. H. Chou, Y. S. Huang and K. K. Tiong, “Coupling between the exciton and cavity modes in a GaAs/GaAlAs asymmetric microcavity structure”, J. Appl. Phys., Vol. 97, No. 9, pp. 093511-1-093511-4 (2005).(SCI&EI)

*          Y. L. Tsai, J. R. Gong, K. M. Lin ,D.Y. Lin and E. C. Chen, “Optical Characteristics of GaN Films Over grown on Wet-etched GaN Templates”, J. J. Appl. Phys., Vol. 44, No. 4A, pp. 1732-1733 (2005). (SCI&EI)

*          T. H. Chen, Y. S. Huang, D. Y. Lin and K. K. Tiong, “Temperature dependence photoreflectance and photoluminescence characterization of GaInNAs/GaAs single quantum well structures”, J. Appl. Phys., Vol. 96, No. 11, pp. 6298-6304 (2004). (SCI&EI)

*          D. Y. Lin, “An angle modulation reflectance spectroscopy characterization of a GaAs/GaAlAs asymmetric microcavity structure” Appl. Phys. Lett., Vol. 84, No. 2, pp. 194-196 (2004). (SCI)

*          Shyi-Shiou Wu, Der-Yun Lin, Sin-Min Tsai, “A Distance Learning and Diagnostic System for Digital Circuit Laboratory,” International Network for Engineering Education and Research Special Volume for 2003 (Chapter 23)

*          J. S. Liang, S. D. Wang, Y. S. Huang, C. W. Tien, Y. M. Chang, C.W. Chen, N. Y. Li, D. Y. Lin and F. H. Pollak, “Polarized Edge-Incident Photovoltage Spectroscopy and reflectance Characterization of a GaAs/GaAlAs Vertical-Cavity Surface-Emitting Laser Structure” Appl. Phys. Lett., Vol. 80,No. 5, pp. 752-754 (2002). (SCI)

*          Y. T. Cheng, Y. S. Huang, D. Y. Lin, F. H. Pollak and K. R. Evans, “Surface Photovoltage Spectroscopy Characterization of the GaAlAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors with Varied Quantum Well Compositional Profiles”, Physica. E, Vol. 14, pp. 313-322 (2002). (SCI&EI)

*          D. Y. Lin, Y. S. Huang, T. Shou, K. K. Tiong and F. H. Pollak, “Temperature Dependent Contactless Electroreflectance and Photoluminescence Study of GaAlAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor Structures”, J. Appl. Phys., Vol. 90, No. 12, pp. 6421-6427 (2001).(SCI&EI)

*          S. M. Tseng, Y. F. Chen, Y. T. Cheng, C. W. Hsu, Y. S. Huang and D. Y. Lin, “Quasi bound States in Type-II ZnTe/CdSe Supperlattices Studied by Modulation Spectroscopies and Photoconductivity at Room Temperature”, Phys. Rev. B, Vol.64, pp. 195311-195316(2001). (SCI&EI)

*          Y. T. Cheng, Y. S. Huang, D. Y. Lin, K. K. Tiong, F. H. Pollak and K.R.Evans, “Surface Photovoltage Spectroscopy Characterization of a GaAlAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor Structure”, Appl. Phys. Lett., Vol. 79, No. 7, pp. 949-951 (2001). (SCI)

*          T. H. Chen, Y. S. Huang, T. S. Shou, K.K. Tiong, D.Y. Lin, F. H. Pollak, M. S. Goorsky, D. C. Streit and M. Wojtowicz, “Room Temperature Polarized Photoreflectance and Photoluminescence Characterization of AlGaAs/InGaAs/GaAs High Electron Mobility Transistor Structures”, Physica E, Vol. 8, pp. 297-305 (2000). (SCI&EI)

*          T. H. Chen, Y. S. Huang, D.Y. Lin, F. H. Pollak, M. S.Goorsky, D. C. Streit and M. Wojtowicz, “Room Temperature Polarized Photoreflectance Characterization of GaAlAs/InGaAs/GaAs High Electron Mobility Transistor Structures Including the Influence of Strain Relaxation”, J. Appl. Phys., Vol. 88, No. 2, pp. 883-889 (2000). (SCI&EI)

*          D. Y. Lin, S. H. Liang, Y. S. Huang, K. K. Tiong, Fred H. Pollak, and K. R. Evans, “Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles”, J. Appl. Phys., Vol. 85, pp. 8235-8241(1999). (SCI&EI)

*          J. C. Fan, Y. F. Chen, D. Y. Lin, Y. S. Huang, M. C. Chen and H. H. Lin, “Above-barrier states inGaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance”, Appl. Phys. Lett., Vol. 86, No. 3, pp. 1460-1462.(1999). (SCI)

*          Kwong-Kau Tiong, D. Y. Lin and Y. S. Huang, “Second Harmonic Electroreflectance AlGaAs-GaAs Asymmetric Triangular and Coupled Double Quantum Wells”, Jpn. J. Appl. Phys. Vol. 38, pp. 2729-2734(1999). (SCI&EI)

*          D. Y. Lin, Y. S. Huang, K. K. Tiong, F. H. Pollak and K. R. Evans, “Room-temperature Phototransmittance and Photoluminescence Characterization of the AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor Structures with Varied Quantum Well Compositional Profiles”, Semicond. Sci. Technol., Vol. 14, pp. 103-109(1999). (SCI&EI)

*          H. J. Chen, D. Y. Lin, Y. S. Huang, R. C. Tu, Y.K. Su and K. K. Tiong, “Temperature Dependence of the Band-edge Exciton of a Zn0.88Mg0.12S0.18Se0.82Epilayer on GaAs”, Semicond. Sci. Technol., Vol. 14, pp. 85-88(1999).(SCI&EI)

*          R. C. Tu, Y. K. Su, D. Y. Lin, C. F. Li, Y. S. Huang, W.H. Lan, S. L. Tu, S. J. Chang, S. C. Chou, and W. C. Chou, “Contactless Electroreflectance Study of Strained Zn0.79Cd0.21Se/ZnSe Double Quantum Wells”, J. Appl. Phys., Vol. 83, pp. 1043-1048(1998).(SCI&EI)

*          D. Y. Lin, Y. S. Huang, Y. F. Chen, and K. K.Tiong, “Contactless Electroreflectance and Piezoreflectance of a Two-Dimensional Electron Gas at a GaN/AlGaN Heterointerface”, Solid State Communications., Vol. 107, No. 10, pp. 533-536, (1998) (SCI&EI)

*          H. J. Chen, D. Y. Lin, Y. S. Huang, R. C. Tu, Y.K. Su, and K. K. Tiong, “Optical Characterization of a Zn0.88Mg0.12S0.18Se0.82 Epilayer on GaAs”, Chinese Journal of Physics., Vol. 36, No. 3, pp.533-541(1998). (SCI)

*          Y. S. Huang, D. Y. Lin, and K. K. Tiong, “Piezoreflectance Study of GaAs/AlGaAs Digital Alloy Compositional Graded Structures”, Proc. Natl. Sci. Counc. ROC(A), Vol. 22, pp.185-198(1998).

*          D. Y. Lin, C. F. Li, Y. S. Huang, Y. C. Jong, Y.F. Chen, L. C. Chen, C. K. Chen, K. H. Chen, and D. M. Bhusari, “Temperature Dependence of the Direct Band Gap of Si-Containing Carbon Nitride Crystalline Films”, Phys. Rev. B, Vol.56, pp. 6498-6501(1997). (SCI&EI)

*          D. Y. Lin, Y. S. Huang, and K. K. Tiong, “A Second-Harmonic Electroreflectance Study of a Coupled GaAs-AlGaAs Double Quantum Well”, Semicond. Sci. Technol., Vol.12, pp. 1111-1115(1997).(SCI&EI)

*          J. C. Fan, Y. F. Chen, M. C.Chen, H. H. Lin, D. Y. Lin, and Y. S. Huang, “Photoreflectance Study of Barrier-Width Dependence of Above-Barrier States in GaAs-AlxGa1-xAs Multiple Quantum Wells”, Jpn. J. Appl. Phys., Vol. 36, No. 9A, pp.5448-5450(1997). (SCI&EI)

*          D. Y. Lin, Y. S. Huang, and K. K. Tiong, “Electroreflectance Studies of Symmetrically Coupled GaAs/AlGaAs Double Quantum Wells”, Chinese Journal of Physics, Vol.35, pp. 280-288(1997). (SCI)

*          C. F. Li, D. Y. Lin, Y. S. Huang, Y. F. Chen, and K. K. Tiong, “Temperature Dependence of Quantized States in an In0.86Ga0.14As0.3P0.7/InP Quantum Well Heterostructure”, J. Appl. Phys., Vol. 81, pp. 400-405(1997).(SCI&EI)

*          D. Y. Lin, C. F. Li, and Y. S. Huang, “Temperature Dependence of Quantized States in a GaAs/Al0.23Ga0.77AsAsymmetric Triangular Quantum Well Heterostructure”, Jpn. J. Appl. Phys. Vol.35,pp3576-3582(1996). (SCI&EI)

*          D. Y. Lin, F. C. Lin, Y. S. Huang, H. Qiang, F.H. Pollak, D. L. Mathine, and G. N. Maracas, “Piezoreflectance and Photoreflectance Study of GaAs/AlGaAs Digital Alloy Compositional Graded Structures”, J. Appl. Phys., Vol. 79, pp. 460-466(1996). (SCI&EI)

*          S. Y. Chung, D. Y. Lin, Y. S Huang, and K. K. Tiong, “Piezoreflectance Study of InP Near the Absorption Edge”, Semicond. Sci. Technol. Vol. 11, pp. 1850-1856(1996). (SCI&EI)

*          W. S. Chi, D. Y. Lin, Y. S. Huang, H. Qiang, F.H. Pollak, D. L. Mathine, and G. N. Maracas, “Temperature dependence of Quantized States in an InGaAs/GaAs Strained Asymmetric Triangular Quantum Well”, Semicond. Sci. Technol., Vol. 11, pp. 345-351(1996). (SCI&EI)

 

Presentationat Professional Conference

*          C.C. Hung (洪嘉政) , D.Y. Lin (林得裕), J. D. Wu (吳俊德), “Characterization of an Al0.13Ga0.87N/GaN hig helectron mobility transistor structure” , 新竹, 物理年會, 2008.

*          F. L. Wu (吳凡磊), D. Y. Lin (林得裕) and T. C. Lu (盧廷昌), “Optical characterization of an InGaP-InGaAlP resonant-cavitylight-emitting diode”, 新竹, 物理年會, 2008.

*          J. Y. Zheng (鄭靖耀), D. Y. Lin(林得裕), and Y. S. Huang (黃鶯聲), “Reflectance and optical absorptionstudy of Au-doped ReS2 layer compound”, 新竹, 物理年會, 2008.

*          H. J. Lin (林弘驥), D. Y. Lin (林得裕), W. C. Chou (周武清), C. S. Yang (楊祝壽), W. H. Lo (羅為宣), and J. S. Wang (王智祥), “Temperature-dependent photoluminescence and reflectance of ZnMnO thin films on c-Al2O3,新竹, 物理年會, 2008.

*          Jing Yao Zheng, Jenq ShinnWu, Der Yuh Lin, and Hung JiLin, “A Comparative Study on Single and Double Channel AlGaN/GaN High ElectronMobility Transistor”, Las Vegas, Nevada, USA.2007.

*          Shin-Li Tsai, Jenq-Shinn Wu,Hung-Ji Lin, Der-Yuh Lin, andJin-Yao Zheng, “Simulation and Design of InGaAsN Metal-Semiconductor-Metal Photodetectors for Long Wavelength Optical Communications”, Las Vegas, Nevada,USA. 2007.

*          H. J. Lin, D. Y. Lin, W. C. Chou, C. S. Yang, W.H. Lo and J. S. Wang, “Optical Characterizations of ZnMnO Thin Film on c-Al2O3, Jeju, Korea. 2007.

*          Kuang-Sheng Lai, Ji-ChenHuang, Der-Yuh Lin and KlausY.-J. Hsu, “High Performance Photodetector in Standard SiGe BiCMOS Process with Spectrum Peak in Visible Light Range”, IEEE Bipolar / BiCMOS Circuits andTechnology Meeting, Boston, Massachussets, USA. 2007.

*          P. Y. Lin, W. T. Tsai, C. L.Wang, K. Y. Yen, C. C. Chang, H. Y. Lin, J. R. Gong , D. Y. Lyu , F. H. Lin, T.Y. Lin, H. J. Lin and D. Y. Lin, “Post-annealing induced formation of ZnO nanowires on the ZnO films in the N 2O ambient”, 2007 MRS April Meeting, San Francisco, CA, USA. 2007.

*          H. J. Lin (林弘驥), J. Y. Zheng (鄭靖耀), D. Y. Lin (林得裕) and N. F. Hsu (許乃方), “Optical properties of In-rich InGaN/AlGaN nanostructures”, 中壢, 物理年會, 2006.

*          M. C. Wu (吳明蒼), H. J. Lin (林弘驥), D. Y. Lin (林得裕) and J. S. Wu (吳正信), “Characterization of an InGaAs/AlGaAs pseudomorphic high electron mobility transistor structure”, 中壢, 物理年會, 2006.

*          J. Y. Zheng (鄭靖耀), H. J. Lin (林弘驥), D. Y. Lin (林得裕), “A numerical study of singleand double channel AlGaN/GaN high electron mobility transistor”, 中壢, 物理年會, 2006.

*          J. D. Wu (吳俊德) and D. Y. Lin (林得裕), “Optical characterization ofthe AlxGa1-xN/GaN high electron mobility transistor structures”, 中壢, 物理年會, 2006.

*          D. Y. Lin, M. C. Wu, J. D.Wu and J. S. Wu, “Photoreflectance and photoluminescence investigations ofInGaAs/AlGaAs pseudomorphic high electron mobility transistor structures”, nternational Electron Devices and Materials Symposia, National Cheng Kung University, Taiwan, 2006.

*          Hung-Ji Lin, Jiun-De Wu, Jian-Jhin Shiu and Der-Yuh Lin, “A low-cost one- and two-dimensional light intensity measurement system using a linear CCD”, Optics and Photonics, Hsinchu, R.O.C., 2006.

*          Shin-Li Tsai, Hung-Ji Lin, and Der-Yuh Lin, “Simulation and Design of InGaAsN Metal-Semiconductor-Metal Photodetectors With Modulation-Doped Heterostructures”, Optics and Photonics, Hsinchu , R.O.C., 2006.

*          林東慶(T. C. Lin),黃俊達(J. D. Hwang),林得裕(D. Y. Lin),林弘驥(H. J. Lin) “液相沉積二氧化矽氧化層在氮化鎵上的電特性探討”, Optics and Photonics, Hsinchu, R.O.C., 2006.

*          J. J. Shiu, J. D. Wu, D. Y. Lin, C. S. Yang, and W. C. Chou, “Optical properties of type II Zn0.97Mn0.03Se/ZnSe0.92Te0.08 multipe-quantum-wells structures”, 台北, 物理年會, 2006.

*          M. C. Wu, D. Y. Lin and Y.S. Huang, “Photoluminescence and photoreflectance study of InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures”, 台北, 物理年會, 2006.

*          J. D. Wu, M. C. Wu and D. Y. Lin, “Optical characterization of compositional intermixing in 1.55-micrometer laser structure”, 台北, 物理年會, 2006.

*          Yen-Ting Pan, San-Liang Lee,Der-Yuh Lin, Jiun-De Wu, and Chiu-Lin Yao, “CW operation of lasers fabricated by ion implantation induced quantum-well-intermixing”, Optics and Photonics, Tainan, R.O.C., 2005.

*          D. Y. Lin, W. C. Lin, W. L. Chen and Y.S. Huang, “The optical characterization of an In0.077Ga0.923N/GaN multiple quantum well structure”, 高雄, 物理年會, 2005.

*          J. J. Shiu, D. Y. Lin, C. F. Lin,“Investigation of InGaN/GaN based asymmetric microcavity structures byreflectance and photoluminescence”, 高雄, 物理年會, 2005.

*          W. C. Lin, D. Y. Lin, Y. S. Huang,“Investigation of selective area ion implantation induced intermixing of InxGa1-xAsyP1-y/InP quantum well laser structures by photoreflectance”, 高雄, 物理年會, 2005.

*          黃俊達, 陳玉鴻, 張文澤, 范榮權, 陳邦旭, 林得裕,“具有非晶矽覆蓋層結構的蕭特基紅外光檢測器”, Optics and Photonics, Hsinchu , R.O.C., 2004.

*          黃俊達, 謝昆宏, 張文澤, 林得裕, 陳邦旭, “ITO 透明電及用在p型矽鍺上的歐姆特性研究”, Optics and Photonics, Hsinchu , R.O.C., 2004.

*          D.Y. Lin, W. C. Lin, H. S. Chen, Y. T. Liu, Y. S. Huang, and R. C. Tu, “Optical characterization of the AlGaN/GaN high electron mobility transistor structures”, 新竹, 物理年會, 2004.

*          H. S. Chen, Y. S. Huang, and D. Y. Lin, “Characterization of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures via surface photovoltage spectroscopy”, 新竹, 物理年會,2004.

*          A. T. H. Chen, Y. S. Huang, J. S.Lin, D. Y. Lin, and K. K. Tiong,“Franz-Keldysh oscillations above GaAs band edge of Ga0.69In0.31NxAs1-x/GaAs single quantumwell structures”, 新竹, 物理年會,2004.

*          D.Y. Lin, W. C. Lin, Y. H. Chou, Y. S. Huang, Y. L. Tsai, and J. R. Gong, “Angle-dependent piezoreflectance and photoluminescence characterization of aGaAs/GaAlAs asymmetric microcavity structure”, Optics and Photonics, Taipei, R.O.C., 2003.

*          D.Y. Lin, Y. H. Chou, H. P. Sheu, Y. S. Huang, and K. K. Tiong, ”Optical characterization of a GaAs/GaAlAs asymmetric microcavity structure”, p. 886, Electron Devices and Materials symposia, Keelung, R.O.C., 2003.

*          T. H. Chen, Y. S. Huang, J. S. Lin, D. Y. Lin, and K. K. Tiong, ”Temperature dependent photoreflectance and photoluminescence study of Ga0.69In0.31NxAs1-x/GaAs single quantum well structures”, p. 565, Electron Devices and Materials symposia, Keelung, R.O.C., 2003.

*          D.Y. Lin, Y. H. Chou, K. H. Huo, Y. S. Huang, Y. L. Tsai, J. R. Gong,“Optical characterization of a GaAs/GaAlAs multi quantum well structure with distributed Bragg reflector”, 花蓮, 物理年會 (2003).

*          吳錫修, 林得裕, "遠距數位電路實習輔助學習與偵錯系統", 第十七屆全國技術及職業教育研討會,一般技職暨人文教育類pp.781-788, May 2002, Taiwan.

*          吳錫修, 林得裕, "遠距數位電路實習輔助學習系統", 第三屆電子化企業經營管理理論與實務研討會論文摘要集, p.23, April 2002, Taiwan.

*          D. Y. Lin, S. D. Wang, Y. S. Huang, Y. L. Tsai, and J. R. Gong, “Nondestructive spectroscopic characterization a GaAs/GaAlAs LED with Bragg mirrors”, Optics and Photonics, Taipei, R.O.C., 2002.

*          Y. L. Tsai, C. L. Yeh, C. L. Wang, J. R.Gong, and D. Y. Lin, ”Implementionof AlN/GaN strained-layer superlattices for blocking threading dislocations in GaN films”, International Electron Devices and Materials symposia, Taipei, R.O.C., 2002.

*          Y. T. Cheng, D. Y. Lin, Y. S. Huang and K. K. Tiong, “Room-Temperature Surface Photovoltage and Photoreflectance Characterization of the GaAlAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor Structures with Varied Quantum Well Compositional Profiles”, 高雄, 物理年會 (2001).

*          D.Y. Lin, S. H. Liang, Y. S. Huang, K. K. Tiong, Y. T. Dai, and Y. F. Chen, “Spectroscopic Studies of the Effects of Surface Segregation of In Atoms on Pseudomorphic GaAlAs/InGaAs/GaAs High Electron Mobility Transistor Structures”, Optics and Photonics, Hsinchu, R.O.C., 1997.

*          H. J. Chen, D. Y. Lin, Y. S. Huang, and K. K. Tiong, “Double-Modulation Photoreflectance for the Characterization of a High Luminescence Quantum-Well Laser Structure”, 1st Annual Meeting on Semiconductor Physics, Taipei, R. O. C., 1997.

*           D. Y. Lin, Y. S. Huang, and K. K. Tiong, “Second Harmonic Electroreflectance Study of a Coupled GaAs/AlGaAs Double Quantum Wells”, 1st Annual Meeting on Semiconductor Physics, Taipei, R. O. C., 1997.

*          D.Y. Lin, Y. S. Huang, S. H. Liang, Y. T. Dai, and Y. F. Chen, “Photoreflectance Characterization of a Pseudomorphic GaAlAs/GaAs Modulation-Doped Quantum Well Structure”, 1st Annual Meeting on Semiconductor Physics, Taipei, R. O. C., 1997.

*          D.Y. Lin, C. F. Li, Y. S. Huang, J. Lee, and B. Elman, “Electroreflectance Studies of GaAs/AlGaAs Symmetrically Coupled Double Quantum Wells”, International Electron Devices and Materials symposia, Hsinchu, R.O.C., 1996.

*          C. F. Li, D. Y. Lin, Y. S. Huang, and Y. F. Chen, “Temperature Dependence of Quantized States in an In0.86Ga0.14As0.3P0.7/InP Quantum Well”, International Electron Devices and Materials symposia, Hsinchu,R.O.C., 1996.

*          D.Y. Lin, F. C. Lin, Y. S. Huang, H. Qiang, F. H. Pollak, D. L. Mathine, and G. N. Maracas, “Piezoreflectance Study of GaAs/AlGaAs Digital Alloy Compositional Graded Heterostructures”, 22nd International Symposium on Compound Semiconductors, Cheju Island, Korea, 1995.