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林得裕老師
by sdmclab, 2008-05-30 16:27:39, 人氣(6268)

 

林得裕 教授

 

Professor Der-Yuh Lin

 

TEL: (04)7232105 ext. 8357 
 

E-mail: dylin@cc.ncue.edu.tw

 

Office: 彰化師範大學寶山校區-教學大樓E534

 

Lab: 彰化師範大學寶山校區-教學大樓E512

 


主要學歷

學校名稱

國別

主修學門系所

學位

起訖年月

國立台灣科技大學

中華民國

電子工程研究所

博士

1994.09 - 1998.06

國立台灣工業技術學院

中華民國

電子工程研究所

碩士

1989.09 - 1991.06

國立台灣工業技術學院

中華民國

電子工程系

學士

1987.09 - 1989.06

 

現職及專長相關之經歷

服務機關

服務部門/系所

職稱

起訖年月

國立彰化師範大學

電子工程學系

教授

2006.07 - 訖今

:

國立彰化師範大學

電子工程學系

副教授

2002.08 - 2006.06

南開技術學院電子工程系

電子工程系

副教授

1998.08 - 2002.07

私立南開工商專科學校

電子工程科

講師

1991.08 - 1998.08

 

討論(0), 附件(1)
研究領域
by sdmclab, 2008-05-30 16:31:02, 人氣(4035)

研究領域

 

光譜技術

 

光子調制光譜 (photoreflectancePR)

非接觸式電場調制光譜 (contactless electroreflectanceCER)

壓電調制光譜 (piezoreflectancePzR)

光激發螢光光譜 (photoluminescencePL)

反射光譜 (reflectance)

穿透光譜 (Transmittance)

光導 (photoconductivity)

持續性光導 (persistent photoconductivity)

 

所探討的領域包括:

*      各種新穎半導體材料之光學特性。

*      半導體量子結構 (例如方形量子井、三角形量子井、耦合量子井、超晶格結構、量子點等) 之量化能階。

*      半導體元件 (例如高電子移動率電晶體、光感測器、發光二極體、雷射二極體、太陽能電池等) 之非破壞性光學量測可研究的光譜波段涵蓋了近紅外、可見光、及近紫外光波段,可進行實驗的溫度範圍從10300 K

 

 

二、元件特性量測

 

*      使用電流-電壓 (I-V) 量測及電容-電壓 (C-V) 量測來探討半導體元件之電特性及半導體材料之介電特性。

*      分別使用固定磁鐵或電磁鐵構成的ACDC霍爾量測(Hall measurement)可量測材料上的電阻率 (Resistivity)、載子濃度 (Carrier Concentration) 與載子移動率 (Carrier Mobility) 的特性,以上可進行實驗的溫度範圍從10300 K

 

 

三、半導體元件結構設計與特性模擬

 

使用APSYS (Advanced Physical Models of Semconductor Devices)軟體來設計各種半導體元件結構,例如異質接面電晶體 (HBT)高電子移動率電晶體(HEMT)、太陽能電池(solar cell)等,並模擬其異質能帶結構、電流對電壓的特性及高頻的元件特性參數等,以做為元件磊晶成長的參考

 

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論文著述
by sdmclab, 2008-05-30 16:37:25, 人氣(5619)

 

Referred Papers

                          Der-Yuh Lin, Yu-Tai Shih*, Wei-Chan Tseng, Chia-Fen Lin and Hone-Zern Chen, “Influence of Doping Mn, Fe, Co, and Cu on the Photoelectric Properties of 1T HfS2 Crystals”, Materials, Vol. 15, p. 173 (2022). SCI  Jan. 2022

            Der-Yuh Lin*, Hung-Pin Hsu , Guang-Hsin Liu, Ting-Zhong Dai and Yu-Tai Shih, “Enhanced Photoresponsivity of 2H-MoTe2 by Inserting 1T-MoTe2 Interlayer Contact for Photodetector Applications”, Crystals, Vol. 11, p. 964 (2021). SCI  Aug. 2021

              Der-Yuh Lin*, Hung-Pin Hsu, Han-Sheng Hu, Yu-Cheng Yang, Chia-Feng Lin and Wei Zhou, “Humidity Sensing and Photodetection Based on Tin Disulfide Nanosheets”, Crystals, Vol. 11, p. 1028 (2021). SCI  Aug. 2021

           Der-Yuh Lin, Hung-Pin Hsu*, Chi-Feng Tsai, Cheng-Wen Wang and Yu-Tai Shih, “Temperature Dependent Excitonic Transition Energy and Enhanced Electron-Phonon Coupling in Layered Ternary SnS2-xSex Semiconductors with Fully Tunable Stoichiometry”, Molecules, Vol. 26, p. 2184 (2021). SCI  April 2021.

           H.P. Hsu, D.Y. Lin*, C.W. Chen, Y.F. Wu, K. Strzałkowski, P. Sitarek, “Optical characterizations of Cd1-XZnXTe mixed crystals grown by vertical Bridgman-Stockbarger method”, Journal of Crystal Growth Vol. 534, p. 125491, (2020), SCI  Jan. 2020

          Bo-Cheng Guo, Der-Yuh Lin*, Hung-Pin Hsu, and Sheng-Beng Hwang “Optical characterization of lead iodide grown by chemical vapor transport method”,  J. Appl. Phys., Vol. 59, SGGK12-1- SGGK12-4 (2020). SCI  Jan. 2020

          Yu-Chung Chang, Yu-Kai Wang, Yen-Ting Chen and Der-Yuh Lin*, “Facile and Reliable Thickness Identification of Atomically Thin Dichalcogenide Semiconductors Using Hyperspectral Microscopy”, Nanomaterials, Vol. 10, p. 526 (2020). SCI  Mar. 2020

              Der-Yuh Lin*, Hone-Zern Chen, Ming-Cheng Kao, San-Lin Young and Wen-Yi Sung, “Nanorod Arrays Enhanced UV Light Response of Mg-Doped ZnO Films”, Symmetry, Vol. 12, p. 1005 (2020). SCI  June 2020

               Der-Yuh Lin, Hone-Zern Chen*, Ming-Cheng Kao and Pei-Li Zhang, “Ferroelectric and Electrical Properties Optimization of Mg-doped BiFeO3 Flexible Multiferroic Films”, Symmetry, Vol. 12, p. 1173 (2020). SCI  July 2020

            Simon A. Svatek, Carlos Bueno-Blanco, Der-Yuh Lin, James Kerfoot, Carlos Macías, Marius H. Zehender, Ignacio Tobías, Pablo García-Linares, Takashi Taniguchi, Kenji Watanabe, Peter Beton, Elisa Antolín, “ High open-circuit voltage in transition metal dichalcogenide solar cells”,  Nano Energy, Vol. 79, p. 105427 (2020). SCI  July. 2020

           Yu-Tai Shih, Yu-Ching Tsai and Der-Yu Lin, “Synthesis and Characterization of CuIn1−xGaxSe2 Semiconductor Nanocrystals”, Nanomaterials, Vol. 10, p. 2066 (2020). SCI  Oct. 2020

            Der-Yuh Lin*, Bo-Cheng Guo, Zih-You Dai, Chia-Feng Lin and Hung-Pin Hsu, “PbI2 Single Crystal Growth and Its Optical Property Study”, Crystals Vol. 9, 589 (2019). SCI

               Pan Li, Kai Yuan, Der-Yuh Lin, Tingting Wang, Wanying Du, Zhongming Wei, Kenji Watanabe, Takashi Taniguchi, Yu Ye * and Lun Dai, “p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices”, RSC Adv., Vol. 9, 35039 (2019). SCI

            Felix Carrascoso, Der-Yuh Lin, Riccardo Frisenda and Andres Castellanos-Gomez, “Biaxial strain tuning of interlayer excitons in bilayer MoS2”, J. Phys.: Mater. Vol. 3, 015003 (2019).

              Hung-Pin Hsu, Der-Yuh Lin*, Jhin-Jhong Jheng, Pin-Cheng Lin and Tsung-Shine Ko, “High Optical Response of Niobium-Doped WSe2-Layered Crystals”, Materials Vol. 12, 1161 (2019). SCI

            Jenq-Shinn Wu, Der-Yuh Lin*, Yun-Guang Li, Hung-Pin Hsu, Ming-Cheng Kao and Hone-Zern Chen, “Optical Characterization and Photovoltaic Performance Evaluation of GaAs p-i-n Solar Cells with Various Metal Grid Spacings”, Crystals Vol. 9, 170 (2019). SCI

             Chi-Feng Tsai, Der-Yuh Lin*, Tsung-Shine Ko, and Sheng-Beng Hwang, “Growth and characterization of SnS2(1-x)Se2x alloys”, Jpn. J. Appl. Phys., Vol. 58, SBBH08-1 - SBBH08-5 (2019). SCI

              Joonki Suh, Teck Leong Tan, Weijie Zhao, Joonsuk Park, Der-Yuh Lin, Tae-Eon Park, Jonghwan Kim, Chenhao Jin, Nihit Saigal, Sandip Ghosh, Zicong Marvin Wong, Yabin Chen, Feng Wang, Wladyslaw Walukiewicz, Goki Eda and Junqiao Wu, Reconfiguring crystal and electronic structures of MoS2 by substitutional doping”, nature communications, Vol. 9, 199-1 - 199-7 (2018). SCI

         Shuai Liu, Kai Yuan, Xiaolong Xu, Ruoyu Yin, Der-Yuh Lin, Yanping Li, Kenji Watanabe, Takashi Taniguchi, Yongqiang Meng, Lun Dai, and Yu Ye* “Hysteresis- Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters”, Advances Electronic Materials, 1800419-1 – 1800419-6 (2018). SCI

               Der-Yuh Lin, Jhih-Jhong Jheng, Tsung-Shine Ko, Hung-Pin Hsu, and Chia-Feng Lin, “Doping with Nb enhances the photoresponsivity of WSe2 thin sheets”, AIP Advances, Vol. 8, 055011-1 - 055011-6 (2018). SCI

               Hung-Pin Hsu, Der-Yuh Lin*, Cheng-Ying Lu, Tsung-Shine Ko and Hone-Zern Chen “Effect of Lithium Doping on Microstructural and Optical Properties of ZnO Nanocrystalline Films Prepared by the Sol-Gel Method”, Crystals, Vol. 8, pp. 228–1-228-7, (2018). SCI

               Tsung-Shine Ko, Yu-Jen Huang, Der-Yuh Lin*, Chia-Feng Lin, Bo-Syun Hong, and Hone-Zern Chen, “Photoresponse properties of large area MoS2 metal–semiconductor–metal photodetectors”,  Jpn. J. Appl. Phys., Vol. 57, pp. 04FP12-1 - 04FP12-4 (2018). SCI

          Hung-Pin Hsu, Der-Yuh Lin*, Guan-Ting Lu, Tsung-Shine Ko, Hone-Zern Chen, “Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure”, Materials Chemistry and Physics, Vol. 220, pp. 433 – 440 (2018). SCI

              Tsung-Shine Ko, Der-Yuh Lin*, Chia-Feng Lin, Che-Wei Chang, Jin-Cheng Zhang, Shang-Ju Tu, “High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer”, Journal of Crystal Growth Vol. 464, pp. 175–179, (2017),

          Tsung-Shine Ko, Zheng-Wen Chen, Der-Yuh Lin*, Joonki Suh, and Zheng-Sheng Chen, “Observation of persistent photoconductivity in Ni doped MoS2”,  Jpn. J. Appl. Phys., Vol. 56, pp. 04CP09-1 - 04CP09-4 (2017). SCI

              Simon A. Svatek, Elisa Antolin, Der-Yuh Lin, Riccardo Frisenda, Christoph Reuter, Aday J. Molina-Mendoza, Manuel Munoz, Nicolas Agrait, Tsung-Shine Ko, David Perez de Laraa and Andres Castellanos-Gomez*, “Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures”, J. Mater. Chem. C, Vol. 5, pp. 854-861, (2017). SCI,

             Christoph Reuter, Riccardo Frisenda, Der-Yuh Lin, Tsung-Shine Ko, David Perez de Lara and Andres Castellanos-Gomez, “ A versatile scanning photocurrent mapping system to characterize optoelectronic devices based on 2D materials”, Small Methods, Vol.1, 1700119, (2017)

                Pan Li, Kai Yuan, Der-Yuh Lin, Xiaolong Xu, Yilun Wang, Yi Wan, Haoran Yu, Kun Zhang, Yu Ye, and Lun Dai, “A Mixed-dimensional light-emitting diode based on a p-MoS2 nanosheet and an n-CdSe nanowire”, Nanoscale, Vol. 9, 18175-18179, (2017). SCI

              Lewis S. Hart , James L. Webb , Stephen Murkin , Daniel Wolverson and Der-Yuh Lin , “Identifying light impurities in transition metal dichalcogenides: the local vibrational modes of S and O in ReSe2 and MoSe2”, npj 2D Materials and Applications (2017)

           Tsung-Shine Ko, Cheng-Ching Huang, and Der-Yuh Lin*, Optical and Transport Properties of Ni-MoS2, Appl. Sci. 6, pp. 227-236, (2016). SCI,   

              Tsung-Shine Ko, Cheng-Ching Huang, Der-Yuh Lin*, Yan-Jia Ruan, and Ying Sheng Huang, Electrical and optical properties of Co-doped and undoped MoS2, Jpn. J. Appl. Phys., Vol. 53, pp 04EP06-1- 04EP06-5 (2016). SCI,

               Tae-Eon Park, Joonki Suh, Dongjea Seo, Joonsuk Park, Der-Yuh Lin, Ying-Sheng Huang, Heon-Jin Choi,Junqiao Wu, Chaun Jang, and Joonyeon Chang, “Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition”, Appl. Phys. Lett. 107, pp 223107-1-,223107-5 (2015). SCI,

               Tsung-Shine Ko, Sin-Liang Ou, Kuo-Sheng Kao, Tzu-Ming Yang, Der-Yuh Lin, Optical Properties of Indium Doeped ZnO Nanowires, International Journal of Photoenergy, vol. 2015, Article ID. 760376 (2015). SCI

                Tsung-Shine Ko, Der-Yuh Lin, You-Chi He, Chen-Chia Kao, Bo-Yuan Hu, Ray-Hua Horng, Fan-Lei Wu, Chih-Hung Wu, and Yu-Li Tsai Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-layer Thicknesses International Journal of Photoenergy, vol. 2015, Article ID. 703045 (2015). SCI

                Yun-Guang Li, Der-Yuh Lin, Tsung-Shine Ko, Jenq-Shinn Wu, Chih-Hung Wu, Yu-Li Tsai, Ming-Cheng Kao, and Hong-Zen Chen, Optical characterization of GaInP p-i-n solar cells Japanese Journal of Applied Physics, 54, 04DR06 (2015). SCI

               Joonki Suh, Tae-Eon Park, Der-Yuh Lin, Deyi Fu, Joonsuk Park, Hee Joon Jung, Yabin Chen, Changhyun Ko, Chaun Jang, Yinghui Sun, Robert Sinclair, Joonyeon Chang, Sefaattin Tongay, and Junqiao Wu,“Doping against the native propensity of MoS2:degenerate hole doping by cation substitution”, Nano Letters, 14 (12), pp 6976–6982 (2014). SCI,

              Song Yu Wang, Tsung Shine Ko, Cheng Ching Huang, Der Yuh Lin, and Ying Sheng Huang, Optical and electrical properties of MoS2 and Fe-doped MoS2, Jpn. J. Appl. Phys., Vol. 53, pp 04EH07-1-04CH07-5 (2014, April). SCI,

              Yu-Ci Jian, Der-Yuh Lin, Jenq-Shinn Wu, and Ying-Sheng Huang, Optical and electrical properties of Au- and Ag-Doped ReSe2, Jpn. J. Appl. Phys., Vol. 52, pp 04CH06-1-04CH06-6 (2013). SCI,

             Chih-Cheng Huang, Chen-Chia Kao, Der-Yuh Lin, Chih-Ming Lin, Fan-Lei Wu, Ray-Hua Horng, and Ying-Sheng Huang, A Comprehensive Study on the Optical Properties of Thin Gold-Doped Rhenium Disulphide Layered Single Crystals, Jpn. J. Appl. Phys., Vol. 52, pp 04CH11-1-04CH11-5 (2013). SCI,

         H. P. Hsu,1, J. K. Huang, Y. S. Huang, D. Y. Lin, W. C. Chen, and Y. K. Su, “Contactless Electroreflectance and Photoluminescence Study of the Sb Surfactant Effects on InGaAsN Multiple Quantum Wells”, Chinese Journal of Physics, Vol. 51, pp 1057-1064. (2013). SCI,

              Yu-Cheng Kao, Tony Huang, Der-Yuh Lin, Ying-Sheng Huang, Kwong-Kau Tiong, Hsin-Yi Lee, Jhih-Min Lin, Hwo-Shuenn Sheu, and Chih-Ming Lin, “Anomalous structural phase transition properties in ReSe2 and Au-doped ReSe2”, The Journal of Chemical Physics, Vol. 137, pp. 024509 024509-6 (2012). SCI,

                J. S. Wu, Y. K. Huang, F. L. Wu, and D. Y. Lin, Design and implementation of a versatile and variable-frequency piezoelectric coefficient measurement system,  Review of Scientific Instruments, Vol. 83, pp. 085110-1 085110-5 (2012). SCI,

              D.Y. Lin , T. P. Huang, Y. C. Kao, C. C. Huang, H. C. Kuo, Li Chang,Optical investigation of A-plane ZnO/ZnMgO multiple quantum wells grown by pulsed laser deposition, Physica. E, Vol. 44, pp. 659664 (2011). SCI,

             J.D. Wu, Y.S. Huang, D.Y. Lin, W.O. Charles, A. Shen, M.C. Tamargo, K.K. Tiong, ”Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnxCd1-xSe/Znx’Cdy’Mg1-x’-y’Se asymmetric coupled quantum well structure”, Journal of Alloys and Compounds, Vol. 509, pp 3751-3755(2011). SCI,

           Tung-Pai Huang, Der-Yuh Lin, Yu-Cheng Kao, Jyun-De Wu, and Ying-Sheng Huang,”Polarized Thermoreflectance and Reflectance Study of ReS2 and ReS2:Au Single Crystals”, Jpn. J. Appl. Phys., Vol. 50, pp 04DH17-1-04DH17-6 (2011). SCI,

            Der-Yuh Lin, Tung-Pai Huang, Fan-Lei Wu, Chih-Ming Lin, Ying-Sheng and Kwong-Kau Tiong,” Anisotropy of photoluminescence in layered semiconductors ReS2 and ReS2:Au”, Solid State Phenomena, Vol. 170, pp 135-138 (2011).

                T. S. Ko, T. C. Lu, L. F. Zhuo, W. L. Wang, M. H. Liang, H. C. Kuo, S. C. Wang, Li Chang, D. Y. Lin, “Optical characteristics of a-plane Zn0.8Mg0.2O/ZnO multiple quantum wells grown by pulsed laser deposition”, Journal of Applied Physics, 108, 073504-073508 (2010). SCI,

          D.Y. Lin , J.D. Wu, C.C. Hung, C.T. Lu, Y.S. Huang, C.-T. Liang, N.C. Chen,  “Optical investigation of an AlGaN/GaN interface with the presence of a two-dimensional electron gas”, Physica. E, Vol. 43, pp. 125–129 (2010). SCI,

             J.S. Wu, C.C. Hung, C.T. Lu, D.Y. Lin, “Comparison of two-dimensional electron gas of etched and unetched InAlAs/ InGaAs/InAlAs metamorphic high electron mobility transistor structures”, Physica. E, Vol. 42, pp. 1212–1215 (2010). SCI,

            Yu-Li Tsai, Ray-Hua Horng, Po-Liang Liu, Ming-Chun Tseng, Der-Yuh Lin, and Dong-Sing Wuu, “Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1−xInxP multilayers”, J. Appl. Phys., Vol. 106, No. 6, pp. 063517-1-063517-5 (2009). SCI,

            D. Y. Lin, W. C. Lin, F. L. Wu, J. S. Wu, Y. T. Pan, S. L. Lee, and Y. S. Huang,” Investigations of interdiffusion in InGaAsP multiple-quantum-well structures by photoreflectance”, Phys. Stat. Sol. (a), Vol. 206, No. 5, pp. 773–779 (2009).SCI,

         D. Y. Lin, H. J. Lin, J. S. Wu, W. C. Chou, C. S. Yang, and J. S. Wang, “A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1−xMnxO thin films grown on c-Al2O3”, J. Appl. Phys., Vol. 105, No. 5, pp. 053506-1-053506-8 (2009). SCI,

          Hung-Ji Lin, Der-Yuh Lin, Jenq-Shinn Wu, Chu-Shou Yang, Wu-Ching Chou, Wei-Hsuan Lo, and Jyh-Shyang Wang, “Optical and Electrical Characterizations of ZnMnO Thin Films on c-Al2O3”, Jan. J. Appl. Phys., Vol. 48, No. 4, pp. 04C122-1-04C122-5 (2009). SCI,

           Jing Yao Zheng, Der Yuh Lin, and Ying Shen Huang, “ Piezoreflectance Study of Band-Edge Excitons of ReS2:Au”, Jan. J. Appl. Phys., Vol. 48, No. 5, pp. 052302-1-052302-5 (2009). SCI,   

          S. S. Tan, C. Y. Liu, Yeu-Long Jiang, Der-Yuh Lin, and Klaus Y. J. Hsu, “Spectral response design of hydrogenated amorphous silicon p-i-n diodes for ambient light sensing”, Appl. Phys. Lett., Vol. 94, No.17, pp. 171103-1-171103-3 (2009). SCI,

             Yu-Li Tsai, Ray-Hua Horng, Ming-Chun Tseng, Dong-Sing Wuu, Der-Yuh Lin, “Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers”, J. Crystal Growth, Vol. 311, pp. 3220-3224 (2009). SCI,

            Hung-Ji Lin, Der-Yuh Lin, Jia-Zheng Hong, Chu-Shou Yang, Chih-Ming Lin, and Chia-Feng Lin,” A study of the grain size and electric properties of Mn-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy”, Phys. Stat. Sol. (c), Vol. 6, pp. 1468–1471 (2009).

              P. Y. Lin, J. R. Gong, P. C. Li, T. Y. Lin, D. Y. Lyu, D. Y. Lin, H. J. Lin, T. C. Li, K. J. Chang, W. J. Lin “Optical and structural characteristics of ZnO films grown on (0 0 01) sapphire substrates by ALD using DEZn and N2O”, J. Crystal Growth, Vol. 310, pp. 3024-3028 (2008). SCI,

          H. J. Lin, D. Y. Lin, J. S. Wu, W. C. Chou, C. S. Yang, J. S.Wang, and W. H. Lo, “Optical Characterization of ZnMnO Thin Films on c-Al2O3, J. Kore. Phys. Soc. Vol. 53, No. 1, pp. 98-101 (2008).

*          Ping-Yuan Lin, Jyh-Rong Gong, Ping-Cheng Li, Tai-Yuan Lin, Dong-Yuan Lyu, Der-Yuh Lin, Hung-Ji Lin, Ta-Ching Li, Kuo-Jen Chang, and Wen-Jen Lin, “Optical and structural characteristics of ZnO films grown on (0001) sapphire substrates by ALD using DEZn and N2O”, J. Cry. Grow. Vol. 310, No. 12, pp. 3024-3028 (2008).

*          Shin-Li Tsai, Jenq-Shinn Wu, Hung-Ji Lin, Der-Yuh Lin, andJin-Yao Zheng, “Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications”, phys. stat. sol.(c) Vol. 5, No. 6, pp. 2167-2169 (2008).

*          Jing Yao Zheng, Jenq Shinn Wu, Der Yuh Lin, and Hung Ji Lin, “A comparative study on single and double channel AlGaN/GaN high electron mobility transistor”, phys. stat. sol. (c) Vol. 5, No. 6, pp. 1944-1946 (2008).

*          D. Y. Lin, M. C. Wu, H. J. Lin and W. L. Chen, “Photoreflectance and photoluminescence investigations of two-dimensional electron gas in pseudomorphic high electron mobility transistor structures”, Physica. E, Vol. 40,No. 5, pp. 1380-1382 (2008).

*          D. Y. Lin, M. C. Wu, H. J. Lin and J. S. Wu, “ Optical studies of two-dimensional electron gas in an InGaAs/AlGaAs pseudomorphic high electron mobility transistor structure”, Physica. E, Vol. 40, No. 5, pp. 1757-1759 (2008).

*          D. Y. Lin, J. D. Wu, J. Y. Zheng and C. F. Lin, “Optical characterization of AlxGa1-xN/GaN high electron mobility transistor structures”, Physica. E, Vol.40, No. 5, pp. 1763-1765 (2008).

*          D. Y. Lin, J. D. Wu, Y. J. Chang, and J. S. Wu, “Practical and simple circuitry for the measurement of small capacitance”, Rev. Sci. Instrum.,Vol. 78, No. 1, pp. 014703-1-014703-5 (2007).

*          D. Y. Lin, J. J. Shiu, J. D. Wu, C. S. Yang, and W. C. Chou, “Optical characterization of Zn0.97Mn0.03Se/ZnSe0.92Te0.08type II multiple-quantum-well structures”, Phys. Stat. Sol. (b), Vol. 244, No.5, pp. 1644-1649 (2007).

*          Jian-Jhin Shiu, Wei-Li Chen, Der-Yuh Lin, Chu-Shou Yang, andWu-Ching Chou, “ Photoluminescence characterization of type II Zn0.97Mn0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures”, Jan. J. Appl. Phys., Vol. 46, No. 4B, pp.2481-2485 (2007).

*          D. Y. Lin, W. C. Lin, and J. J. Shiu, “Optical study of the AlGaN/GaN high electron mobility transistor structures”, Phys. Stat. Sol. (a),Vol. 203, No. 7, pp. 1856-1860.(2006).

*          D. Y. Lin, J. J. Shiu, and C. F. Lin, “Reflectance and photoluminescence studies of InGaN/GaN multiple-quantum-well structures embedded in an asymmetric microcavity”, Phys. Stat. Sol. (b), Vol. 243, No. 7,pp. 1647-1651 (2006).

*          D. Y. Lin, W. L. Chen, W. C. Lin, J. J. Shiu, and J. Han, “Photoluminescence and edge-incident wavelength modulation transmittance spectroscopy characterizations of InGaN/GaN multiple-quantum-well structures”, Phys. Stat. Sol. (c), Vol. 3, No. 6, pp. 1983-1987 (2006).

*          Chia-Feng Lin, Jing-Hui Zheng, Zhong-Jie Yang, Jing-Jie Dai, Der-Yuh Lin, Chung-Ying Chang, Zhao-Xu Lai, and C. S. Hong, “ High-Efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure”, Appl. Phys. Lett., Vol. 88, No. 8, pp. 083121-1-083121-3 (2006). (SCI)

*          D. Y. Lin, “Optical Characterization of a GaAs/GaAlAs asymmetric microcavity structure”, Optics Express, Vol. 13, No. 26, pp. 10865-10872(2005). (SCI&EI)

*          Ching-Hwa Ho, Kuo-Wei Huang, Yu-Shyan Lin and Der-Yuh Lin, “A practical PL and PR spectroscopic system for optical characterization of semiconductor devices”, Optics Express, Vol. 13, No. 11, pp. 3951-3960 (2005).(SCI&EI)

*          D. Y. Lin, Y. H. Chou, Y. S. Huang and K. K. Tiong, “Coupling between the exciton and cavity modes in a GaAs/GaAlAs asymmetric microcavity structure”, J. Appl. Phys., Vol. 97, No. 9, pp. 093511-1-093511-4 (2005).(SCI&EI)

*          Y. L. Tsai, J. R. Gong, K. M. Lin ,D.Y. Lin and E. C. Chen, “Optical Characteristics of GaN Films Over grown on Wet-etched GaN Templates”, J. J. Appl. Phys., Vol. 44, No. 4A, pp. 1732-1733 (2005). (SCI&EI)

*          T. H. Chen, Y. S. Huang, D. Y. Lin and K. K. Tiong, “Temperature dependence photoreflectance and photoluminescence characterization of GaInNAs/GaAs single quantum well structures”, J. Appl. Phys., Vol. 96, No. 11, pp. 6298-6304 (2004). (SCI&EI)

*          D. Y. Lin, “An angle modulation reflectance spectroscopy characterization of a GaAs/GaAlAs asymmetric microcavity structure” Appl. Phys. Lett., Vol. 84, No. 2, pp. 194-196 (2004). (SCI)

*          Shyi-Shiou Wu, Der-Yun Lin, Sin-Min Tsai, “A Distance Learning and Diagnostic System for Digital Circuit Laboratory,” International Network for Engineering Education and Research Special Volume for 2003 (Chapter 23)

*          J. S. Liang, S. D. Wang, Y. S. Huang, C. W. Tien, Y. M. Chang, C.W. Chen, N. Y. Li, D. Y. Lin and F. H. Pollak, “Polarized Edge-Incident Photovoltage Spectroscopy and reflectance Characterization of a GaAs/GaAlAs Vertical-Cavity Surface-Emitting Laser Structure” Appl. Phys. Lett., Vol. 80,No. 5, pp. 752-754 (2002). (SCI)

*          Y. T. Cheng, Y. S. Huang, D. Y. Lin, F. H. Pollak and K. R. Evans, “Surface Photovoltage Spectroscopy Characterization of the GaAlAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors with Varied Quantum Well Compositional Profiles”, Physica. E, Vol. 14, pp. 313-322 (2002). (SCI&EI)

*          D. Y. Lin, Y. S. Huang, T. Shou, K. K. Tiong and F. H. Pollak, “Temperature Dependent Contactless Electroreflectance and Photoluminescence Study of GaAlAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor Structures”, J. Appl. Phys., Vol. 90, No. 12, pp. 6421-6427 (2001).(SCI&EI)

*          S. M. Tseng, Y. F. Chen, Y. T. Cheng, C. W. Hsu, Y. S. Huang and D. Y. Lin, “Quasi bound States in Type-II ZnTe/CdSe Supperlattices Studied by Modulation Spectroscopies and Photoconductivity at Room Temperature”, Phys. Rev. B, Vol.64, pp. 195311-195316(2001). (SCI&EI)

*          Y. T. Cheng, Y. S. Huang, D. Y. Lin, K. K. Tiong, F. H. Pollak and K.R.Evans, “Surface Photovoltage Spectroscopy Characterization of a GaAlAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor Structure”, Appl. Phys. Lett., Vol. 79, No. 7, pp. 949-951 (2001). (SCI)

*          T. H. Chen, Y. S. Huang, T. S. Shou, K.K. Tiong, D.Y. Lin, F. H. Pollak, M. S. Goorsky, D. C. Streit and M. Wojtowicz, “Room Temperature Polarized Photoreflectance and Photoluminescence Characterization of AlGaAs/InGaAs/GaAs High Electron Mobility Transistor Structures”, Physica E, Vol. 8, pp. 297-305 (2000). (SCI&EI)

*          T. H. Chen, Y. S. Huang, D.Y. Lin, F. H. Pollak, M. S.Goorsky, D. C. Streit and M. Wojtowicz, “Room Temperature Polarized Photoreflectance Characterization of GaAlAs/InGaAs/GaAs High Electron Mobility Transistor Structures Including the Influence of Strain Relaxation”, J. Appl. Phys., Vol. 88, No. 2, pp. 883-889 (2000). (SCI&EI)

*          D. Y. Lin, S. H. Liang, Y. S. Huang, K. K. Tiong, Fred H. Pollak, and K. R. Evans, “Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles”, J. Appl. Phys., Vol. 85, pp. 8235-8241(1999). (SCI&EI)

*          J. C. Fan, Y. F. Chen, D. Y. Lin, Y. S. Huang, M. C. Chen and H. H. Lin, “Above-barrier states inGaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance”, Appl. Phys. Lett., Vol. 86, No. 3, pp. 1460-1462.(1999). (SCI)

*          Kwong-Kau Tiong, D. Y. Lin and Y. S. Huang, “Second Harmonic Electroreflectance AlGaAs-GaAs Asymmetric Triangular and Coupled Double Quantum Wells”, Jpn. J. Appl. Phys. Vol. 38, pp. 2729-2734(1999). (SCI&EI)

*          D. Y. Lin, Y. S. Huang, K. K. Tiong, F. H. Pollak and K. R. Evans, “Room-temperature Phototransmittance and Photoluminescence Characterization of the AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor Structures with Varied Quantum Well Compositional Profiles”, Semicond. Sci. Technol., Vol. 14, pp. 103-109(1999). (SCI&EI)

*          H. J. Chen, D. Y. Lin, Y. S. Huang, R. C. Tu, Y.K. Su and K. K. Tiong, “Temperature Dependence of the Band-edge Exciton of a Zn0.88Mg0.12S0.18Se0.82Epilayer on GaAs”, Semicond. Sci. Technol., Vol. 14, pp. 85-88(1999).(SCI&EI)

*          R. C. Tu, Y. K. Su, D. Y. Lin, C. F. Li, Y. S. Huang, W.H. Lan, S. L. Tu, S. J. Chang, S. C. Chou, and W. C. Chou, “Contactless Electroreflectance Study of Strained Zn0.79Cd0.21Se/ZnSe Double Quantum Wells”, J. Appl. Phys., Vol. 83, pp. 1043-1048(1998).(SCI&EI)

*          D. Y. Lin, Y. S. Huang, Y. F. Chen, and K. K.Tiong, “Contactless Electroreflectance and Piezoreflectance of a Two-Dimensional Electron Gas at a GaN/AlGaN Heterointerface”, Solid State Communications., Vol. 107, No. 10, pp. 533-536, (1998) (SCI&EI)

*          H. J. Chen, D. Y. Lin, Y. S. Huang, R. C. Tu, Y.K. Su, and K. K. Tiong, “Optical Characterization of a Zn0.88Mg0.12S0.18Se0.82 Epilayer on GaAs”, Chinese Journal of Physics., Vol. 36, No. 3, pp.533-541(1998). (SCI)

*          Y. S. Huang, D. Y. Lin, and K. K. Tiong, “Piezoreflectance Study of GaAs/AlGaAs Digital Alloy Compositional Graded Structures”, Proc. Natl. Sci. Counc. ROC(A), Vol. 22, pp.185-198(1998).

*          D. Y. Lin, C. F. Li, Y. S. Huang, Y. C. Jong, Y.F. Chen, L. C. Chen, C. K. Chen, K. H. Chen, and D. M. Bhusari, “Temperature Dependence of the Direct Band Gap of Si-Containing Carbon Nitride Crystalline Films”, Phys. Rev. B, Vol.56, pp. 6498-6501(1997). (SCI&EI)

*          D. Y. Lin, Y. S. Huang, and K. K. Tiong, “A Second-Harmonic Electroreflectance Study of a Coupled GaAs-AlGaAs Double Quantum Well”, Semicond. Sci. Technol., Vol.12, pp. 1111-1115(1997).(SCI&EI)

*          J. C. Fan, Y. F. Chen, M. C.Chen, H. H. Lin, D. Y. Lin, and Y. S. Huang, “Photoreflectance Study of Barrier-Width Dependence of Above-Barrier States in GaAs-AlxGa1-xAs Multiple Quantum Wells”, Jpn. J. Appl. Phys., Vol. 36, No. 9A, pp.5448-5450(1997). (SCI&EI)

*          D. Y. Lin, Y. S. Huang, and K. K. Tiong, “Electroreflectance Studies of Symmetrically Coupled GaAs/AlGaAs Double Quantum Wells”, Chinese Journal of Physics, Vol.35, pp. 280-288(1997). (SCI)

*          C. F. Li, D. Y. Lin, Y. S. Huang, Y. F. Chen, and K. K. Tiong, “Temperature Dependence of Quantized States in an In0.86Ga0.14As0.3P0.7/InP Quantum Well Heterostructure”, J. Appl. Phys., Vol. 81, pp. 400-405(1997).(SCI&EI)

*          D. Y. Lin, C. F. Li, and Y. S. Huang, “Temperature Dependence of Quantized States in a GaAs/Al0.23Ga0.77AsAsymmetric Triangular Quantum Well Heterostructure”, Jpn. J. Appl. Phys. Vol.35,pp3576-3582(1996). (SCI&EI)

*          D. Y. Lin, F. C. Lin, Y. S. Huang, H. Qiang, F.H. Pollak, D. L. Mathine, and G. N. Maracas, “Piezoreflectance and Photoreflectance Study of GaAs/AlGaAs Digital Alloy Compositional Graded Structures”, J. Appl. Phys., Vol. 79, pp. 460-466(1996). (SCI&EI)

*          S. Y. Chung, D. Y. Lin, Y. S Huang, and K. K. Tiong, “Piezoreflectance Study of InP Near the Absorption Edge”, Semicond. Sci. Technol. Vol. 11, pp. 1850-1856(1996). (SCI&EI)

*          W. S. Chi, D. Y. Lin, Y. S. Huang, H. Qiang, F.H. Pollak, D. L. Mathine, and G. N. Maracas, “Temperature dependence of Quantized States in an InGaAs/GaAs Strained Asymmetric Triangular Quantum Well”, Semicond. Sci. Technol., Vol. 11, pp. 345-351(1996). (SCI&EI)

 

Presentationat Professional Conference

*          C.C. Hung (洪嘉政) , D.Y. Lin (林得裕), J. D. Wu (吳俊德), “Characterization of an Al0.13Ga0.87N/GaN hig helectron mobility transistor structure” , 新竹, 物理年會, 2008.

*          F. L. Wu (吳凡磊), D. Y. Lin (林得裕) and T. C. Lu (盧廷昌), “Optical characterization of an InGaP-InGaAlP resonant-cavitylight-emitting diode”, 新竹, 物理年會, 2008.

*          J. Y. Zheng (鄭靖耀), D. Y. Lin(林得裕), and Y. S. Huang (黃鶯聲), “Reflectance and optical absorptionstudy of Au-doped ReS2 layer compound”, 新竹, 物理年會, 2008.

*          H. J. Lin (林弘驥), D. Y. Lin (林得裕), W. C. Chou (周武清), C. S. Yang (楊祝壽), W. H. Lo (羅為宣), and J. S. Wang (王智祥), “Temperature-dependent photoluminescence and reflectance of ZnMnO thin films on c-Al2O3,新竹, 物理年會, 2008.

*          Jing Yao Zheng, Jenq ShinnWu, Der Yuh Lin, and Hung JiLin, “A Comparative Study on Single and Double Channel AlGaN/GaN High ElectronMobility Transistor”, Las Vegas, Nevada, USA.2007.

*          Shin-Li Tsai, Jenq-Shinn Wu,Hung-Ji Lin, Der-Yuh Lin, andJin-Yao Zheng, “Simulation and Design of InGaAsN Metal-Semiconductor-Metal Photodetectors for Long Wavelength Optical Communications”, Las Vegas, Nevada,USA. 2007.

*          H. J. Lin, D. Y. Lin, W. C. Chou, C. S. Yang, W.H. Lo and J. S. Wang, “Optical Characterizations of ZnMnO Thin Film on c-Al2O3, Jeju, Korea. 2007.

*          Kuang-Sheng Lai, Ji-ChenHuang, Der-Yuh Lin and KlausY.-J. Hsu, “High Performance Photodetector in Standard SiGe BiCMOS Process with Spectrum Peak in Visible Light Range”, IEEE Bipolar / BiCMOS Circuits andTechnology Meeting, Boston, Massachussets, USA. 2007.

*          P. Y. Lin, W. T. Tsai, C. L.Wang, K. Y. Yen, C. C. Chang, H. Y. Lin, J. R. Gong , D. Y. Lyu , F. H. Lin, T.Y. Lin, H. J. Lin and D. Y. Lin, “Post-annealing induced formation of ZnO nanowires on the ZnO films in the N 2O ambient”, 2007 MRS April Meeting, San Francisco, CA, USA. 2007.

*          H. J. Lin (林弘驥), J. Y. Zheng (鄭靖耀), D. Y. Lin (林得裕) and N. F. Hsu (許乃方), “Optical properties of In-rich InGaN/AlGaN nanostructures”, 中壢, 物理年會, 2006.

*          M. C. Wu (吳明蒼), H. J. Lin (林弘驥), D. Y. Lin (林得裕) and J. S. Wu (吳正信), “Characterization of an InGaAs/AlGaAs pseudomorphic high electron mobility transistor structure”, 中壢, 物理年會, 2006.

*          J. Y. Zheng (鄭靖耀), H. J. Lin (林弘驥), D. Y. Lin (林得裕), “A numerical study of singleand double channel AlGaN/GaN high electron mobility transistor”, 中壢, 物理年會, 2006.

*          J. D. Wu (吳俊德) and D. Y. Lin (林得裕), “Optical characterization ofthe AlxGa1-xN/GaN high electron mobility transistor structures”, 中壢, 物理年會, 2006.

*          D. Y. Lin, M. C. Wu, J. D.Wu and J. S. Wu, “Photoreflectance and photoluminescence investigations ofInGaAs/AlGaAs pseudomorphic high electron mobility transistor structures”, nternational Electron Devices and Materials Symposia, National Cheng Kung University, Taiwan, 2006.

*          Hung-Ji Lin, Jiun-De Wu, Jian-Jhin Shiu and Der-Yuh Lin, “A low-cost one- and two-dimensional light intensity measurement system using a linear CCD”, Optics and Photonics, Hsinchu, R.O.C., 2006.

*          Shin-Li Tsai, Hung-Ji Lin, and Der-Yuh Lin, “Simulation and Design of InGaAsN Metal-Semiconductor-Metal Photodetectors With Modulation-Doped Heterostructures”, Optics and Photonics, Hsinchu , R.O.C., 2006.

*          林東慶(T. C. Lin),黃俊達(J. D. Hwang),林得裕(D. Y. Lin),林弘驥(H. J. Lin) “液相沉積二氧化矽氧化層在氮化鎵上的電特性探討”, Optics and Photonics, Hsinchu, R.O.C., 2006.

*          J. J. Shiu, J. D. Wu, D. Y. Lin, C. S. Yang, and W. C. Chou, “Optical properties of type II Zn0.97Mn0.03Se/ZnSe0.92Te0.08 multipe-quantum-wells structures”, 台北, 物理年會, 2006.

*          M. C. Wu, D. Y. Lin and Y.S. Huang, “Photoluminescence and photoreflectance study of InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures”, 台北, 物理年會, 2006.

*          J. D. Wu, M. C. Wu and D. Y. Lin, “Optical characterization of compositional intermixing in 1.55-micrometer laser structure”, 台北, 物理年會, 2006.

*          Yen-Ting Pan, San-Liang Lee,Der-Yuh Lin, Jiun-De Wu, and Chiu-Lin Yao, “CW operation of lasers fabricated by ion implantation induced quantum-well-intermixing”, Optics and Photonics, Tainan, R.O.C., 2005.

*          D. Y. Lin, W. C. Lin, W. L. Chen and Y.S. Huang, “The optical characterization of an In0.077Ga0.923N/GaN multiple quantum well structure”, 高雄, 物理年會, 2005.

*          J. J. Shiu, D. Y. Lin, C. F. Lin,“Investigation of InGaN/GaN based asymmetric microcavity structures byreflectance and photoluminescence”, 高雄, 物理年會, 2005.

*          W. C. Lin, D. Y. Lin, Y. S. Huang,“Investigation of selective area ion implantation induced intermixing of InxGa1-xAsyP1-y/InP quantum well laser structures by photoreflectance”, 高雄, 物理年會, 2005.

*          黃俊達, 陳玉鴻, 張文澤, 范榮權, 陳邦旭, 林得裕,“具有非晶矽覆蓋層結構的蕭特基紅外光檢測器”, Optics and Photonics, Hsinchu , R.O.C., 2004.

*          黃俊達, 謝昆宏, 張文澤, 林得裕, 陳邦旭, “ITO 透明電及用在p型矽鍺上的歐姆特性研究”, Optics and Photonics, Hsinchu , R.O.C., 2004.

*          D.Y. Lin, W. C. Lin, H. S. Chen, Y. T. Liu, Y. S. Huang, and R. C. Tu, “Optical characterization of the AlGaN/GaN high electron mobility transistor structures”, 新竹, 物理年會, 2004.

*          H. S. Chen, Y. S. Huang, and D. Y. Lin, “Characterization of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures via surface photovoltage spectroscopy”, 新竹, 物理年會,2004.

*          A. T. H. Chen, Y. S. Huang, J. S.Lin, D. Y. Lin, and K. K. Tiong,“Franz-Keldysh oscillations above GaAs band edge of Ga0.69In0.31NxAs1-x/GaAs single quantumwell structures”, 新竹, 物理年會,2004.

*          D.Y. Lin, W. C. Lin, Y. H. Chou, Y. S. Huang, Y. L. Tsai, and J. R. Gong, “Angle-dependent piezoreflectance and photoluminescence characterization of aGaAs/GaAlAs asymmetric microcavity structure”, Optics and Photonics, Taipei, R.O.C., 2003.

*          D.Y. Lin, Y. H. Chou, H. P. Sheu, Y. S. Huang, and K. K. Tiong, ”Optical characterization of a GaAs/GaAlAs asymmetric microcavity structure”, p. 886, Electron Devices and Materials symposia, Keelung, R.O.C., 2003.

*          T. H. Chen, Y. S. Huang, J. S. Lin, D. Y. Lin, and K. K. Tiong, ”Temperature dependent photoreflectance and photoluminescence study of Ga0.69In0.31NxAs1-x/GaAs single quantum well structures”, p. 565, Electron Devices and Materials symposia, Keelung, R.O.C., 2003.

*          D.Y. Lin, Y. H. Chou, K. H. Huo, Y. S. Huang, Y. L. Tsai, J. R. Gong,“Optical characterization of a GaAs/GaAlAs multi quantum well structure with distributed Bragg reflector”, 花蓮, 物理年會 (2003).

*          吳錫修, 林得裕, "遠距數位電路實習輔助學習與偵錯系統", 第十七屆全國技術及職業教育研討會,一般技職暨人文教育類pp.781-788, May 2002, Taiwan.

*          吳錫修, 林得裕, "遠距數位電路實習輔助學習系統", 第三屆電子化企業經營管理理論與實務研討會論文摘要集, p.23, April 2002, Taiwan.

*          D. Y. Lin, S. D. Wang, Y. S. Huang, Y. L. Tsai, and J. R. Gong, “Nondestructive spectroscopic characterization a GaAs/GaAlAs LED with Bragg mirrors”, Optics and Photonics, Taipei, R.O.C., 2002.

*          Y. L. Tsai, C. L. Yeh, C. L. Wang, J. R.Gong, and D. Y. Lin, ”Implementionof AlN/GaN strained-layer superlattices for blocking threading dislocations in GaN films”, International Electron Devices and Materials symposia, Taipei, R.O.C., 2002.

*          Y. T. Cheng, D. Y. Lin, Y. S. Huang and K. K. Tiong, “Room-Temperature Surface Photovoltage and Photoreflectance Characterization of the GaAlAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor Structures with Varied Quantum Well Compositional Profiles”, 高雄, 物理年會 (2001).

*          D.Y. Lin, S. H. Liang, Y. S. Huang, K. K. Tiong, Y. T. Dai, and Y. F. Chen, “Spectroscopic Studies of the Effects of Surface Segregation of In Atoms on Pseudomorphic GaAlAs/InGaAs/GaAs High Electron Mobility Transistor Structures”, Optics and Photonics, Hsinchu, R.O.C., 1997.

*          H. J. Chen, D. Y. Lin, Y. S. Huang, and K. K. Tiong, “Double-Modulation Photoreflectance for the Characterization of a High Luminescence Quantum-Well Laser Structure”, 1st Annual Meeting on Semiconductor Physics, Taipei, R. O. C., 1997.

*           D. Y. Lin, Y. S. Huang, and K. K. Tiong, “Second Harmonic Electroreflectance Study of a Coupled GaAs/AlGaAs Double Quantum Wells”, 1st Annual Meeting on Semiconductor Physics, Taipei, R. O. C., 1997.

*          D.Y. Lin, Y. S. Huang, S. H. Liang, Y. T. Dai, and Y. F. Chen, “Photoreflectance Characterization of a Pseudomorphic GaAlAs/GaAs Modulation-Doped Quantum Well Structure”, 1st Annual Meeting on Semiconductor Physics, Taipei, R. O. C., 1997.

*          D.Y. Lin, C. F. Li, Y. S. Huang, J. Lee, and B. Elman, “Electroreflectance Studies of GaAs/AlGaAs Symmetrically Coupled Double Quantum Wells”, International Electron Devices and Materials symposia, Hsinchu, R.O.C., 1996.

*          C. F. Li, D. Y. Lin, Y. S. Huang, and Y. F. Chen, “Temperature Dependence of Quantized States in an In0.86Ga0.14As0.3P0.7/InP Quantum Well”, International Electron Devices and Materials symposia, Hsinchu,R.O.C., 1996.

*          D.Y. Lin, F. C. Lin, Y. S. Huang, H. Qiang, F. H. Pollak, D. L. Mathine, and G. N. Maracas, “Piezoreflectance Study of GaAs/AlGaAs Digital Alloy Compositional Graded Heterostructures”, 22nd International Symposium on Compound Semiconductors, Cheju Island, Korea, 1995.

 

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by sdmclab, 2008-05-31 08:41:45, 人氣(2682)

 

電路學

電子學

電子技術

光電半導體元件

光電與半導體量測技術

半導體元件及材料特性分析

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